西安博尔新材料有限责任公司
西安博尔新材料有限责任公司

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High-purity ultra-fine cubic SiC powder for semiconductor manufacturing

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High-purity ultra-fine cubic SiC powder for semiconductor manufacturing

The parent source is micro powder with high purity (99.99%〜99.9999%) and super fineness (0〜0.1μm), and single crystal with particle size (50〜800μm). It can be used to manufacture single crystal silicon carbide using the vapor deposition method. It has excellent electric conduction, heat conduction, wear resistant, heat resistant and corrosion resistant properties, so it can be used as a substitute for electronic-grade monocrystalline silicone and polycrystalline silicone in frontier fields such as military industry, aerospace, and electronics. It is an accepted third generation semiconductor material and LED-used electronic packaging and baseplate material in the high-tech area.
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The parent source is micro powder with high purity (99.99%〜99.9999%) and super fineness (0〜0.1μm), and single crystal with particle size (50〜800μm). It can be used to manufacture single crystal silicon carbide using the vapor deposition method. It has excellent electric conduction, heat conduction, wear resistant, heat resistant and corrosion resistant properties, so it can be used as a substitute for electronic-grade monocrystalline silicone and polycrystalline silicone in frontier fields such as military industry, aerospace, and electronics. It is an accepted third generation semiconductor material and LED-used electronic packaging and baseplate material in the high-tech area.

Xi'an Bor

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Time of issue:2019-04-29 00:00:00
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