西安博尔新材料有限责任公司
西安博尔新材料有限责任公司

Products

High end cubic SiC chip substrate

The parent source is micro powder with high purity (99.99%〜99.9999%) and super fineness (0〜0.1μm), and single crystal with particle size (50〜800μm). It can be used to manufacture single crystal silicon carbide using the vapor deposition method. It has excellent electric conduction, heat conduction, wear resistant, heat resistant and corrosion resistant properties, so it can be used as a substitute for electronic-grade monocrystalline silicone and polycrystalline silicone in frontier fields such as military industry, aerospace, and electronics. It is an accepted third generation semiconductor material and LED-used electronic packaging and baseplate material in the high-tech area.
Details 白箭头 黑箭头
Previous page
1

底部导航

Time of issue:2019-04-29 00:00:00
西安博尔新材料有限责任公司

Copyright © 2019 Xi'an boer New Material Co., Ltd. All Rights Reserved  陕ICP备19025199号-1   Powered by www.300.cn