High end cubic SiC chip substrate
The parent source is micro powder with high purity (99.99%〜99.9999%) and super fineness (0〜0.1μm), and single crystal with particle size (50〜800μm). It can be used to manufacture single crystal silicon carbide using the vapor deposition method. It has excellent electric conduction, heat conduction, wear resistant, heat resistant and corrosion resistant properties, so it can be used as a substitute for electronic-grade monocrystalline silicone and polycrystalline silicone in frontier fields such as military industry, aerospace, and electronics. It is an accepted third generation semiconductor material and LED-used electronic packaging and baseplate material in the high-tech area.
Time of issue:2019-04-29 00:00:00