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The secret of BYD's electric car battery life with high energy consumption and low energy consumption
IGBT (InsulatedGateBipolarTransistor) stands for "Insulated Gate Bipolar Transistor"
Third generation wide band gap semiconductor materials silicon carbide (SiC) and gallium nitride (GaN)
In the development process of the semiconductor industry
Application of polishing liquid: sapphire wafer
Sapphire (a-Al2O3) is a multifunctional oxide crystal that combines excellent optical
Silicon Carbide: The “Perfect Point” for Carbon Fiber Brake Pads
At present, brake pads are one of the most critical safety parts
Cubic SiC and its performance
The hardness of β-SiC is between super hard abrasive and ordinary abrasive
6-inch silicon carbide device production line successfully launched in Beijing
On February 1, 2018, Beijing's high-precision project-a 6-inch silicon
Fujian Quanzhou Xingu strives to exceed 200 billion yuan in the total semiconductor industry chain by 2025
Large construction machinery vehicles shuttle back and forth
Stable growth base, with "core" driven future Infineon 2017 performance review and 2018 outlook
According to a report released by the Semiconductor Trade Statistics Association
China's "fully enclosed mobile silicon carbide smelting furnace technology" has reached a high level
Beijing, September 15, CCTV (reporter Liu Tiansi) on September 14